Semiconductor memory device and method of manufacturing the same

ABSTRACT

A semiconductor memory device and a method of manufacturing the same are provided. The device includes interlayer insulating patterns and conductive patterns stacked alternately, vertical channel layers formed through the interlayer insulating patterns and the conductive patterns, a tunnel insulating layer formed to surround sidewalls of each of the vertical channel layers, and a multifunctional layer formed to surround the tunnel insulating layer. The multifunctional layer includes trap regions disposed at intersections between the vertical channel layers and the conductive patterns, respectively, and disposed to be in contact with the tunnel insulating layer, blocking regions disposed to be in contact with the trap regions and the conductive patterns, and sacrificial regions disposed between adjacent ones of the blocking regions.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority of Korean Patent Application No.10-2013-0075217, filed on Jun. 28, 2013, the entire disclosure of whichis incorporated herein by reference in its entirety.

BACKGROUND

1. Field of Invention

Embodiments of the present invention relate to a semiconductor device.More specifically, the embodiments of the present invention relate to asemiconductor memory device and a method of manufacturing the same.

2. Description of Related Art

A semiconductor memory device may include memory cells in which data maybe stored. In general, the memory cells may be 2-dimensionally arrangedwithin a limited area. In this case, to provide a high-capacitysubminiature semiconductor memory device, the integration density of thememory cells may be increased by reducing the size of each of the memorycells.

The size of the memory cells may not be further reduced to a certainsize to ensure reliability. Also, the size of the memory cells may notbe further reduced due to the restrictions of a manufacturing process.As described above, there is a limit in reducing the size of the memorycells. To overcome the limitation while increasing the integrationdensity of the memory cells within a limited area, a semiconductormemory device in which memory cells are 3-dimensionally arranged hasbeen proposed.

A 3-dimensional semiconductor memory device may include word linesstacked on a substrate, apart from one another, a channel layer formedthrough the word lines ire a direction vertical to the substrate, atunnel insulating layer formed to surround the channel layer, a chargestorage layer formed to surround the tunnel insulating layer, and ablocking insulating layer formed to surround the charge storage layer.Memory cells may trap charges in a partial region of the charge storagelayer disposed at intersections between the word lines and the channellayer to store data.

In the 3-dimensional semiconductor memory device, the charge storagelayer may not be separated into respective memory cells but may beformed to surround the entire surfaces of sidewalls of the channellayer. Thus, charges stored in a specific memory cell may be transportedto another memory cell along the charge storage layer. In this case,since it is difficult to ensure data retention characteristics, it maybe difficult to ensure reliability of the 3-dimensional semiconductormemory device.

BRIEF SUMMARY

The present invention is directed to a semiconductor memory device and amethod of manufacturing the same, which may prevent transport of chargesbetween memory cells and improve reliability.

One aspect of the present invention provides a semiconductor memorydevice including interlayer insulating patterns and conductive patternsstacked alternately, vertical′ channel layers formed through theinterlayer insulating patterns and the conductive patterns, a tunnelinsulating layer formed to surround sidewalls of each of the verticalchannel layers, and a multifunctional layer formed to surround thetunnel insulating layer, wherein the multifunctional layer includes trapregions disposed at intersections between the vertical channel layersand the conductive patterns, respectively, and disposed to be in contactwith the tunnel insulating layer, blocking regions disposed to be incontact with the trap regions and the conductive patterns, andsacrificial regions disposed between adjacent ones of the blockingregions.

Another aspect of the present invention provides a method ofmanufacturing a semiconductor memory device. The method includesalternately stacking interlayer insulating layers and sacrificiallayers, forming holes through the interlayer insulating layers and thesacrificial layers, forming a preliminary layer, a tunnel insulatinglayer, and a channel layer within each of the holes, forming a slitbetween the holes through the interlayer insulating layers and thesacrificial layers, removing the sacrificial layers exposed through theslit to form recess regions, firstly processing the preliminary layerexposed through the recess regions, thereby defining trap regions inpartial regions of the preliminary layer, secondly processing thepreliminary layer disposed around the trap regions, thereby definingblocking regions contacting the trap regions in partial regions of thepreliminary layer, and forming conductive patterns within the recessregions.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent to those of ordinary skill in the art bydescribing in detail exemplary embodiments thereof with reference to theattached drawings in which:

FIG. 1 is a perspective view of a semiconductor memory device accordingto an exemplary embodiment of the present invention;

FIGS. 2A and 2B are enlarged cross-sectional views of region A shown inFIG. 1, which illustrate various examples of a through structure;

FIGS. 3A through 3F are cross-sectional views illustrating a method ofmanufacturing the semiconductor memory device shown in FIG. 1;

FIG. 4 is a perspective view of a semiconductor memory device accordingto an exemplary embodiment of the present invention;

FIG. 5 is an enlarged cross-sectional view of region B shown in FIG. 4,which illustrates a through structure;

FIGS. 6A through 6D are cross-sectional views illustrating a method ofmanufacturing the semiconductor memory device shown in FIG. 4;

FIG. 7 is a construction diagram of a memory system according to anexemplary embodiment of the present invention; and

FIG. 8 is a construction diagram of a computing system according to anexemplary embodiment of the present invention.

DETAILED DESCRIPTION

The present invention will be described more fully hereinafter withreference to the accompanying drawings in which exemplary embodiments ofthe invention are shown. This invention may, however, be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. These embodiments are provided so thatthis disclosure will be thorough and complete, and will fully convey thescope of the present invention to those skilled in the art. Throughoutthe disclosure, reference numerals correspond directly to the likenumbered parts in the various figures and embodiments of the presentinvention.

In the drawings, the thicknesses of layers and regions may beexaggerated compared to actual physical thicknesses for clarity.Descriptions of well-known components and processing techniques areomitted so as not to unnecessarily obscure the embodiments of thepresent invention. It should be readily understood that the meaning of“on” and “over” in the present disclosure should be interpreted in thebroadest manner such that “on” means not only “directly on” but also“on” something with an intermediate feature(s) or a layer(s)therebetween, and that “over” means not only directly on top but also ontop of something with an intermediate feature(s) or a layer(s)therebetween. It is also noted that in this specification,“connected/coupled” refers to one component not only directly couplinganother component but also indirectly coupling another component throughan intermediate component. In addition, a singular form may include aplural form as long as it is not specifically mentioned in a sentence.

FIG. 1 is a perspective view of a semiconductor memory device accordingto an exemplary embodiment of the present invention. In FIG. 1, theillustration of an insulating layer is omitted for convenience ofexplanation.

Referring to FIG. 1, the semiconductor memory device according to theexemplary embodiment of the present invention may include a commonsource line 111 bit lines BL formed over the common source line 111, andcell strings ST disposed between the bit lines BL and the common sourceline 111.

The common source line 111 may be a conductive thin layer disposed on asemiconductor substrate or an impurity implantation region formed in thesemiconductor substrate. The bit lines BL may be conductive lines spacedapart from the common source line 111 and disposed over the commonsource line 111. A plurality of cell strings ST may be connected to eachof the bit lines BL, and the cell strings ST connected to each of thebit lines BL are disposed in parallel to one another. The cell stringsST connected to each of the bit lines BL may be connected in common tothe common source line 111.

Each of the cell strings ST may be connected to conductive patterns 151Ato 151F stacked apart from one another between the bit lines BL and thecommon source line 111. At least one conductive pattern (e.g., 151A)including the lowermost layer of the conductive patterns 151A to 151Fmay be used as a lower selection gate, while at least one conductivepattern (e.g., 151F) including the uppermost layer of the conductivepatterns 151A to 151F may be used as an upper selection gate. Conductivepatterns (e.g., 151B to 151E) between the lower selection gate and theupper selection gate may be used as memory cell gates. The conductivepatterns 151A to 151F may form line patterns along a direction crossingthe bit lines BL.

Each of the cell strings ST may include a through structure 141. Thethrough structure 141 may be vertically formed from a top surface of thecommon source line 111 and connected to the bit line BL through theconductive patterns 151A to 151F. A lower selection transistor may bedefined at an intersection between the through structure 141 and theconductive pattern (e.g., 151A) serving as the lower selection gate, andan upper selection transistor may be defined at an intersection betweenthe through structure 141 and the conductive pattern (e.g., 151F)serving as the upper selection gate. Memory cell transistors may bedefined at intersections between the through structure 141 and theconductive patterns (e.g., 151B to 151E) serving as the memory cellgates. The lower selection transistor, the memory cell transistors, andthe upper selection transistor of each of the cell strings ST may beconnected in series through the through structure 141.

Hereinafter, the through structure 141 will be described in furtherdetail with reference to FIGS. 2A and 2B.

FIGS. 2A and 2B are enlarged cross-sectional views of region A shown inFIG. 1, which illustrate various examples of a through structure.

Referring to FIGS. 2A and 2B, the through structure 141 may include avertical channel layer 137 formed through interlayer insulating patterns121P2 and conductive patterns 151D and 151E, stacked alternately, atunnel insulating layer 135 formed to surround sidewalls of the verticalchannel layer 137, and a multifunctional layer 131 formed to surroundthe tunnel insulating layer 135. The vertical channel layer 137 may beformed of a semiconductor layer. As shown, the vertical channel layer137 may be formed within a hole formed through the interlayer insulatingpatterns 121P2 and the conductive patterns 151D and 151E, stackedalternately. Here, the hole may have various plane shapes, such as acircular shape, an elliptical shape, and a polygonal shape. A centralregion of the vertical channel layer 137 may be filled with aninsulating layer 139. Alternatively, although not shown, not only thesurface of the vertical channel layer 137 but also the central region ofthe vertical channel layer 137 may be formed of a semiconductor layer.

Trap regions 131 b and blocking regions 131 c and 131 c′ may be definedin the multifunctional layer 131. The trap regions 131 b may be spacedapart from one another in a direction in which the vertical channellayer 137 extends, and may be in contact with the tunnel insulatinglayer 135. The blocking regions 131 c and 131 c′ may be in contact withthe trap regions 131 b and the conductive patterns 151D and 151E. Alength L of each of the trap regions 131 b disposed along the directionin which the vertical channel layer 137 extends, that is, a direction inwhich the interlayer insulating patterns 121P2 and the conductivepatterns 151D and 151E are stacked, may be less or greater than adistance D between the interlayer insulating patterns 121P2 that arespaced apart, according to design specifications. Alternatively, thelength L of each of the trap regions 131 b may be equal to the distanceD between the interlayer insulating patterns 121P2 that are spacedapart, according to design specifications.

The trap regions 131 b may be formed at intersections between theconductive patterns 151D and 151E and the vertical channel layer 137 tosurround and contact the tunnel insulating layer 135. The trap regions131 b may include silicon nitride. The trap regions 131 b may trapcharges and store data.

Each of the blocking regions 131 c or 31 c′ may be in contact with topand bottom surfaces of each of the trap regions 131 b, sidewalls of eachof the trap regions 131 b, which face the conductive patterns 151D and151E, and sidewalls of the conductive patterns 151D and 151E. Thus, theblocking regions 131 c or 131 c′ may electrically insulate the trapregions 131 b from the conductive patterns 151D and 151E andelectrically insulate the trap regions 131 b from one another. Theblocking regions 131 c and 131 c′ may include silicon oxide.

As shown in FIG. 2A, the multifunctional layer 131 may further includesacrificial regions 131 a. Each of the sacrificial regions 131 a may beinterposed between the blocking regions 131 c and defined as a ring typeto surround the tunnel insulating layer 135. The sacrificial regions 131a may be unnitrided or unoxidized regions, which may include silicon.The sacrificial regions 131 a may be surrounded by the interlayerinsulating patterns 121P2 and spaced apart from the trap regions 131 bby the blocking regions 131 c.

During an oxidation process for forming the blocking regions 131 c′, theentire region of the multifunctional layer 131 except the trap regions131 b may be defined as the blocking regions 131 c′ as shown in FIG. 2B.

In the exemplary embodiment as described above, since the trap regions131 b may be separated into cells by the blocking regions 131 c and 131c′, the transport of charges between memory cells may be prevented,thereby improving the reliability of the semiconductor memory device,

FIGS. 3A through 3F are cross-sectional views illustrating a method ofmanufacturing the semiconductor memory device shown in FIG. 1.

Referring to FIG. 3A, interlayer insulating layers 121 and sacrificiallayers 123 may be alternately stacked on a semiconductor substrate (notshown) in which a common source line is formed. The interlayerinsulating layers 121 may be formed of an oxide-based material, such asa silicon oxide layer. The sacrificial layers 123 may be formed of amaterial having an etch selectivity different from the interlayerinsulating layers 121. For example, the sacrificial layers 123 may beformed of a silicon nitride layer. When an etching process for reducingthe thickness of the interlayer insulating layers 121 is performedduring a subsequent process, each of the interlayer insulating layers121 may be formed to have a greater thickness than a thickness of eachof the sacrificial layers 123.

Thereafter, the interlayer insulating layers 121 and the sacrificiallayers 123 may be etched to form holes 125 through the interlayerinsulating layers 121 and the sacrificial layers 123. Subsequently, apreliminary layer 130, a tunnel insulating layer 135, and a verticalchannel layer 137 may be sequentially formed along sidewalls of each ofthe holes 125, thereby forming a preliminary through structure 141 a.The preliminary layer 130 maybe formed of a silicon layer. The tunnelinsulating layer 135 may be formed of a silicon oxide layer. Thevertical channel layer 137 may be formed of a semiconductor layer, suchas a silicon layer. The vertical channel layer 137 may be formed to filla central region of each of the holes 125. Alternatively, the verticalchannel layer 137 may be formed to open the central region of each ofthe holes 125. The opened central region of each of the holes 125 may befilled with an insulating layer 139.

Referring to FIG. 3B, the interlayer insulating layers 121 and thesacrificial layers 123 disposed between the holes 125 may be etched toform a slit 143 between the holes 125, through the interlayer insulatinglayers 121 and the sacrificial layers 123. Due to the slit 143, aline-shaped preliminary interlayer insulating pattern 121P1 may bedefined, and the sacrificial layers 123 may be exposed.

Referring to FIG. 3C, the sacrificial layers 123 exposed through theslit 143 may be selectively removed to form preliminary recess regions145 a between the preliminary interlayer insulating patterns 121P1 toexpose partial regions of the preliminary layer 130.

Thereafter, the partial regions of the preliminary layer 130 exposedthrough the preliminary recess regions 145 a may be firstly processed todefine trap regions 131 b. The first processing process may includenitriding the preliminary layer 130. Due to the first processingprocess, the trap regions 131 b may turn into nitrided regions includingsilicon nitride. The trap regions 131 b may be formed in the partialregions of the preliminary layer 130 to surround and contact the tunnelinsulating layer 135. The trap regions 131 b may be separated from oneanother and disposed in a direction in which the vertical channel layer137 extends. The first processing process may be controlled so thatpartial regions of the preliminary layer 130, not exposed through thepreliminary recess regions 145 a and cut off by the preliminaryinterlayer insulating pattern 121P1, are not firstly processed butremain as regions (hereinafter, referred to as “non-trap regions”) thatare not defined as the trap regions 131 b.

Referring to FIG. 3D, a cleaning process or an additional etchingprocess may be performed to remove a portion of each of preliminaryinterlayer insulating patterns 121P1. Thus, interlayer insulatingpatterns 121P2 may be formed to have a smaller thickness thanthicknesses of the preliminary interlayer insulating patterns 121P1.Between the interlayer insulating patterns 121P2, recess regions 145 bmay be defined to have a greater width than widths of the preliminaryrecess regions 145 a, and the non-trap regions of the preliminary layer130, which are not defined as the trap regions 131 b, may be exposed.The thickness of the preliminary interlayer insulating patterns 121P1may be reduced so that a material (e.g., an oxidation gas) for a secondprocessing process may easily diffuse into the non-trap regions of thepreliminary layer 130. Even if the thickness of the preliminaryinterlayer insulating patterns 121P1 is not reduced, as long as thenon-trap regions of the preliminary layer 130 in contact with the trapregions 131 b may be sufficiently secondly processed, the processdescribed with reference to FIG. 3D may be omitted.

Referring to FIG. 3E, portions of the trap regions 131 b exposed throughthe recess regions 145 b and the non-trap regions of the preliminarylayer 130 adjacent to the trap regions 131 b may be secondly processed.Thus, blocking regions 131 c in contact with the trap regions 131 b maybe defined in the preliminary layer 130.

The second processing process may include oxidizing the portions of thetrap regions 131 b and the non-trap regions of the preliminary layer 130using an oxidation gas. The non-trap regions of the preliminary layer130 may be oxidized at a higher speed than the trap regions 131 b.Accordingly, an oxidized thickness d2 of each of the non-trap regions ofthe preliminary layer 130 may be greater than an oxidized thickness d1of each of the trap regions 131 b.

When the blocking regions 131 c are formed using a difference inoxidation rate, for example, only a partial region of each of the trapregions 131 b may be defined as a blocking region. Also, the blockingregions 131 c may be defined to have a sufficient thickness toelectrically insulate the trap regions 131 b from one another. Theoxidation process may be controlled so that portions of the trap regions131 b and the vertical channel layer 137 remain not oxidized. To thisend, the oxidation process may be controlled so that a portion of thenon-trap region of the preliminary layer 130 interposed between the trapregions 131 b is not oxidized but remains as a sacrificial region 131 a.The entire non-trap regions of the preliminary layer 130 may be oxidizedto form blocking regions, as long as portions of the trap regions 131 band the vertical channel layer 137 remain not oxidized. The oxidationprocess may be variously modified by controlling an oxidation time, agas composition, a pressure, and a temperature.

Referring to FIG. 3F, conductive patterns 151 may be formed within therecess regions 145 b. The formation of the conductive patterns 151 mayinclude forming a conductive layer to fill the recess regions 145 b andremoving the conductive layer formed within the slit 143. The conductivelayer may be formed using a doped polysilicon (poly-Si) layer, a metalsilicide layer, or a metal layer. When the conductive layer is formedusing the metal layer, tungsten having a low resistance may be used. Inthis case, before the conductive layer is formed, a barrier layer 149formed of, for example, titanium nitride (TiN), may be further formed toprevent diffusion of a metal. The barrier layer 149 formed within theslit 143 may be removed during the removal of the conductive layerformed within the slit 143.

Meanwhile, before the barrier layer 149 and the conductive layer areformed to form the conductive patterns 151, a blocking insulating layer147 may be further formed along the surfaces of the recess regions 145b.

Subsequently, a known subsequent process, for example, a process offilling the slit 143 with an insulating material, may be performed.

In the exemplary embodiment as described above, partial regions of thepreliminary layer 130 may be opened and defined as the trap regions 131b, and partial regions of the preliminary layer 130 in contact with thetrap regions 131 b may be defined as the blocking regions 131 c. As aresult, since the trap regions 131 b may be separated into respectivecells by the blocking regions 131 c, the transport of charges betweenthe memory cells may be prevented, thereby improving reliability of thesemiconductor memory device.

In addition, in the exemplary embodiment of the present invention, sincethe partial regions of the preliminary layer 130 are defined as the trapregions 131 b and the blocking regions 131 c thereby forming themultifunctional layer 141, interfaces may not be formed between the trapregions 131 b and the blocking regions 131 c. Thus, in the exemplaryembodiment of the present invention, concerns regarding degradation ofreliability of the semiconductor memory device due to charges trapped atthe interfaces between the trap regions 131 b and the blocking regions131 c may be alleviated.

FIG. 4 is a perspective view of a semiconductor memory device accordingto an exemplary embodiment of the present invention. In FIG. 4, theillustration of an insulating layer is omitted for convenience ofexplanation.

Referring to FIG. 4, the semiconductor memory device according to theexemplary embodiment of the present invention may include a pipe gatePG, a common source line 271 formed over the pipe gate PG, bit lines BLformed over the pipe gate PG, source-side conductive patterns 251S_A to251S_E stacked apart from one another between the common source line 271and the pipe gate PG, and drain-side conductive patterns 251D_A to251D_E stacked apart from one another between the bit lines BL and thepipe gate PG. Also, the semiconductor memory device according to theexemplary embodiment of the present invention may include a throughstructure 241 formed through the source-side conductive patterns 251S_Ato 251S_E, the pipe gate PG, and the drain-side conductive patterns251D_A to 251D_E.

The through structure 241 may include a source-side through structure241S and a drain-side through structure 241D, which may be parallel toeach other, and a pipe through structure 241P formed to connect thesource-side through structure 241S and the drain-side through structure241D. The source-side through structure 241S may be connected to thecommon source line 271 and vertically extend to penetrate thesource-side conductive patterns 251S_A to 251S_E. The drain-side throughstructure 241D may be connected to one of the bit lines BL andvertically extend to penetrate the drain-side conductive patterns 251D_Ato 251D_E. The pipe through structure 241P may horizontally extendthrough the pipe gate PG and connect the source-side through structure241S and the drain-side through structure 241D. Memory cells may beconnected in series along the through structure 241 and constitute acell string ST.

The pipe gate PG may be formed by stacking first and second pipe gates211A and 211B. When the second pipe gate 211B is in contact with a topsurface of the pipe through structure 241P, the drain-side throughstructure 241D and the source-side through structure 241S may furtherpenetrate the second pipe gate 211B and be connected to the pipe throughstructure 241P.

The common source line 271 and the bit lines BL may be conductive linesand disposed in different layers apart from one another. For example,the bit lines BL may be formed on the common source line 271. The commonsource line 271 and the bit lines BL may extend and intersect eachother. A plurality of cell strings ST may be connected to each of thebit lines BL, and the cell strings ST connected to each of the bit linesBL are disposed in parallel to one another. The cell strings STconnected to each of the bit lines BL may be connected in common to thecommon source line 271.

Each of the cell strings ST may be connected to drain-side conductivepatterns 251D_A to 251D_E and source-side conductive patterns 251S_A to251S_E. At least one conductive pattern (e.g., 251D_E) including theuppermost layer of the drain-side conductive patterns 251D_A to 251D_Emay be used as a drain selection gate. Also, at least one conductivepattern (e.g., 251S_E) including the uppermost layer of the source-sideconductive patterns 251S_A to 251S_E may be used as a source selectiongate. Conductive patterns (e.g., 251S_A to 251S_D) disposed under thesource selection gate and conductive patterns (e.g. 251D_A to 251D_D)disposed under the drain selection gate may be used as memory cellgates. The drain-side conductive patterns 251D_A to 251D_E and thesource-side conductive patterns 251S_A to 251S_E may form line patternsalong a direction crossing the bit lines BL.

As described above, each of the cell strings ST may include a throughstructure 241 connected between the common source line 271 and the bitline BL. A drain selection transistor may be defined at an intersectionbetween the through structure 241 and the conductive pattern (e.g.,251D_E) serving as the drain selection gate, and a source selectiontransistor may be defined at an intersection between the throughstructure 241 and the conductive pattern (e.g., 251S_E) serving as thesource selection gate. Memory cell transistors may be defined atintersections between the through structure 241 and the conductivepatterns (e.g., 251S_A through 251S_D and 251D_A through 251D_D),respectively, serving as the memory cell gates. Furthermore a pipetransistor may be defined at an intersection between the throughstructure 241 and the pipe gate PG. The pipe transistor, the drainselection transistor, the memory cell transistors, and the sourceselection transistor of each of the cell strings ST may be connected inseries through the through structure 241.

Hereinafter, the through structure 241 will be described in furtherdetail with reference to FIG. 5.

FIG. 5 is an enlarged cross-sectional view of region B shown in FIG. 4,which illustrates a through structure 241.

Referring to FIG. 5, the through structure 241 may include a channelstructure including a drain-side vertical channel layer 237D, asource-side vertical channel layer 2375, and a pipe channel layer 237Pformed to connect the drain-side vertical channel layer 237D and thesource-side vertical channel layer 2375, a tunnel insulating layer 235formed to surround side walls of the channel structure, andmultifunctional layer 231 formed to surround the tunnel insulating layer235. The drain-side vertical channel layer 237D may be formed throughinterlayer insulating patterns 221P2 and the drain-side conductivepatterns 251D_A and 251D_B, which are stacked alternately. Thesource-side vertical channel layer 237S may be formed through theinterlayer insulating patterns 221P2 and the source-side conductivepatterns 251S_A and 251S_B, which are stacked alternately. The pipechannel layer 237P may connect the drain-side vertical channel layer237D and the source-side vertical channel layer 237S, and be formed inthe pipe gate PG.

The channel structure may be formed of a semiconductor layer. As shown,a central region of the channel structure may be filled with aninsulating layer 239. Alternatively, both the surface and central regionof the channel structure may be formed of a semiconductor layer.

Trap regions 231 b and blocking regions 231 c may be defined in themultifunctional layer 231. The trap regions 231 b may be disposed apartfrom one another in a direction in which the drain-side vertical channellayer 237D and the source-side vertical channel layer 237S extend. Thetrap regions 231 b may be in contact with the tunnel insulating layer235. Some blocking regions 231 c may be in contact with respective trapregions 231 b and the drain-side conductive patterns 251D_A and 251D_B,and other blocking regions 231 c may be in contact with respective trapregions 231 b and the source-side conductive patterns 251S_A and 251S_B.The trap regions 231 b and the blocking regions 231 c may be formed inthe same shapes as the shapes of the trap regions 131 b and the blockingregions 131 c, described above with reference to FIG. 2A. A partialregion of the multifunctional layer 231 formed to surround the pipechannel layer 231P may be an unoxidized or unnitrided sacrificial region231 a. Since the trap region 231 b is not defined in the pipetransistor, a driving voltage of the pipe transistor may be reduced, andthe trapping of charges in the pipe transistor may be reduced. Inaddition, the sacrificial region 231 a may be disposed in themultifunctional layer 231 to surround the tunnel insulating layer 235between adjacent blocking regions 231 c along a direction in which eachof the drain-side vertical channel layer 237D and the source-sidevertical channel layer 237S extends. The sacrificial regions 231 aspaced apart from one another in the direction in which each of thedrain-side vertical channel layer 237D and the source-side verticalchannel layer 237S extends may be unnitrided or unoxidized regions. Thesacrificial regions 231 a may be surrounded by the interlayer insulatingpatterns 221P2 and spaced apart from the trap regions 231 b by theblocking regions 231 c.

FIGS. 6A through 6D are cross-sectional views illustrating a method ofmanufacturing the semiconductor memory device shown in FIG. 4.

Referring to FIG. 6A, after a pipe trench 213 is formed in a first pipegate 211A, the pipe trench 213 may be filled with a sacrificial layer215. Thereafter, a second pipe gate 211B may be formed on the first pipegate 211A filled with the sacrificial layer 215, and the first andsecond pipe gates 211A and 211B may be patterned to form a pipe gate PG.The first and second pipe gates 211A and 211B may be formed of aconductive layer. In the above-described process, the process of formingthe second pipe gate 211B may be omitted.

Subsequently, interlayer insulating layers 221 and sacrificial layers223 may be alternately stacked on the pipe gate PG. Materials formingthe interlayer insulating layers 221 and the sacrificial layers 223 andthicknesses of the interlayer insulating layers 221 and the sacrificiallayers 223 may be the same as those described above with reference toFIG. 3A.

Thereafter, the interlayer insulating layers 221 and the sacrificiallayers 223 may be etched to form a drain-side hole 225D and asource-side hole 2255 through the interlayer insulating layers 221 andthe sacrificial layers 223. In this case, when the second pipe gate 211Bis formed, the second pipe gate 211B may be further etched so that thesacrificial layer 215 disposed within the pipe trench 213 may be exposedthrough the drain-side hole 225D and the source-side hole 2255.

Referring to FIG. 6B, the sacrificial layer 215 disposed within the pipetrench 213 may be removed to open the pipe trench 213. Thereafter, apreliminary layer 230, a tunnel insulating layer 235, and a channellayer 237 may be sequentially formed along the surfaces of thedrain-side hole 225D, the source-side hole 225S and the pipe trench 213to form a preliminary through structure 241 a. Kinds and shapes ofmaterial layers constituting the preliminary through structure 241 a maybe the same as those described with reference to FIG. 3A. When a centralregion of the channel layer 237 is opened, the opened central region ofthe channel layer 237 may be filled with an insulating layer 239.

Referring to FIG. 6C, the interlayer insulating layers 221 and thesacrificial layers 223 interposed between the drain-side hole 225D andthe source-side hole 2255 may be etched to form a slit 243 through theinterlayer insulating layers 221 and the sacrificial layers 223. Due tothe slit 243, a line-shaped preliminary interlayer insulating pattern221P1 may be defined, and the sacrificial layers 223 may be exposed.

Subsequently, as described above with reference to FIG. 3C, thesacrificial layers 223 may be selectively removed to form preliminaryrecess regions 245 a, and partial regions of the preliminary layer 230exposed through the preliminary recess regions 245 a may be firstlyprocessed to form trap regions 231 b in partial regions of thepreliminary layer 230. The first processing process may includenitriding the preliminary layer 230. The first processing process may becontrolled so that partial regions of the preliminary layer 230, whichare not firstly processed, remain as non-trap regions between the trapregions 231 b, and the preliminary layer 230 disposed within the pipetrench 213 is not firstly processed but remain as a non-trap region.

Referring to FIG. 6D, as described above with reference to FIG. 3D, aportion of each of the preliminary interlayer insulating patterns 221P1may be etched so that interlayer insulating patterns 221P2 having asmaller thickness than thicknesses of the preliminary interlayerinsulating patterns 221P1 may be formed. Thus, recess regions 245 bhaving a greater width than widths of the preliminary recess regions 245a may be defined between the interlayer insulating patterns 221P2.

Thereafter, as described above with reference to FIG. 3E, portions ofthe trap regions 231 b exposed through the recess regions 245 b andnon-trap regions of the preliminary layer 230 adjacent to the trapregions 231 b may be secondly processed. As a result, blocking regions231 c in contact with the trap regions 231 b may be formed. The secondprocessing process may include an oxidation process as described abovewith reference to FIG. 3E. The second processing process may becontrolled so that the preliminary layer 230 disposed within the pipetrench 213 remains not secondly processed. As a result, the preliminarylayer 230 disposed within the pipe trench 213 may not undergo either thefirst processing process or the second processing process but remain asa sacrificial region 231 a formed of a silicon layer.

Subsequently, as described above with reference to FIG. 3F, a blockinginsulating layer 247, a barrier layer 249, and a conductive pattern 251may be formed in each of the recess regions 245 b. Thereafter, a knownsubsequent process, for example, a process of filling the slit 243 withan insulating material, may be performed.

As described above, in the exemplary embodiment, the trap regions 231 bmay be separated into cells as in the exemplary embodiment, andinterfaces may not be formed between the trap regions 231 b and theblocking regions 231 c. Accordingly, in the exemplary embodiment, thetransport of charges between memory cells and the trapping of charges atinterfaces between layers may be reduced.

Furthermore, in the exemplary embodiment, the trap regions 231 b may beprevented from being formed in the pipe transistor so that the trappingof charges in the pipe transistor may be reduced. Also, the sacrificialregions 231 a formed of silicon may be connected to the pipe gate PG,thereby reducing a driving voltage of the pipe transistor.

FIG. 7 is a construction diagram of a memory system 1100 according to anexemplary embodiment of the present invention.

Referring to FIG. 7, the memory system 1100 according to the exemplaryembodiment of the present invention may include a nonvolatile memorydevice 1120 and a memory controller 1110.

The nonvolatile memory device 1120 may include a semiconductor devicedescribed in the foregoing embodiments with reference to FIGS. 1 through6D. Also, the nonvolatile memory device 1120 may be a multi-chip packageincluding a plurality of flash memory chips.

The memory controller 1110 may control the nonvolatile memory device1120 and include a static random access memory (SRAM) 1111, a centralprocessing unit (CPU) 1112, a host interface 1113, an error correctioncode (ECC) 1114, and a memory interface 1115. The SRAM 1111 may be usedas an operation memory of the CPU 1112, and the CPU 1112 may performgeneral control operations for exchanging data of the memory controller1110. The host interface 1113 may include a data exchange protocol of ahost connected to the memory system 1100. Also, the ECC 1114 may detectand correct errors included in data read from the nonvolatile memorydevice 1120, and the memory interface 1115 may interface with thenonvolatile memory device 1120. In addition, the memory controller 1110may further include a read-only memory (ROM) that may store code datarequired to interface with the host.

The memory system 1100 having the above-described construction may be amemory card or a solid-state disk (SSD) in which the nonvolatile memorydevice 1120 is combined with the controller 1110. For instance, when thememory system 1100 is an SSD, the memory controller 1110 may communicatewith the outside (e.g., the host) through one of various interfaceprotocols, such as a universal serial bus (USB), a multimedia card(MMC), peripheral component interface-express (PCI-E), serial advancedtechnology attachment (SATA), parallel-ATA (PATA), a small computersystem interface (SCSI), an enhanced small device interface (ESDI), andan integrated drive electronics (IDE).

FIG. 8 is a construction diagram of a computing system 1200 according toan exemplary embodiment of the present invention.

Referring to FIG. 8, the computing system 1200 according to theexemplary embodiment of the present invention may include a CPU 1220, anRAM 1230, a user interface 1240, a modem 1250, and a memory system 1210,which may be electrically connected to a system bus 1260. Also, when thecomputing system 1200 is a mobile device, the computing system 1200 mayfurther include a battery that may supply an operation voltage to thecomputing system 1200. Also, the computing system 1200 may furtherinclude an application chipset, a camera image processor (CIS), and amobile dynamic RAM (mobile DRAM).

As described above with reference to FIG. 7, the memory system 1210 mayinclude a nonvolatile memory 1212 and a memory controller 1211.

According to the present disclosure, partial regions of a preliminarylayer may be opened to define trap regions, and partial regions of thepreliminary layer in contact with the trap regions may be defined asblocking regions. As a result, in the present disclosure, since the trapregions may be separated into respective cells by blocking regions, thetransport of charges between memory cells may be prevented, therebyimproving reliability of semiconductor memory devices.

Furthermore, according to the present disclosure, since partial regionsof a preliminary layer may be defined as trap regions and blockingregions to form a multifunctional layer, interfaces between the trapregions and the blocking regions are not formed. Accordingly, in thepresent disclosure, concerns regarding degradation of reliability ofsemiconductor memory devices due to charges trapped at the interfacesbetween the trap regions and the blocking regions may be alleviated.

In the drawings and specification, there have been disclosed typicalexemplary embodiments of the invention, and although specific terms areemployed, they are used in a generic and descriptive sense only and notfor purposes of limitation. As for the scope of the invention, it is tobe set forth in the following claims. Therefore, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

What is claimed is:
 1. A method of manufacturing a semiconductor memorydevice, the method comprising: alternately stacking interlayerinsulating layers and sacrificial layers; forming holes through theinterlayer insulating layers and the sacrificial layers; forming apreliminary layer, a tunnel insulating layer, and a channel layer withineach of the holes; forming a slit between the holes through theinterlayer insulating layers and the sacrificial layers; removing thesacrificial layers exposed through the slit to form recess regions;firstly processing the preliminary layer exposed through the recessregions, thereby defining trap regions in partial regions of thepreliminary layer; secondly processing the preliminary layer disposedaround the trap regions, thereby defining blocking regions contactingthe trap regions, in partial regions of the preliminary layer; andforming conductive patterns within the recess regions.
 2. The method ofclaim 1, wherein the preliminary layer includes a silicon layer.
 3. Themethod of claim 1, wherein the first processing of the preliminary layerincludes nitriding the partial regions of the preliminary layer exposedthrough the recess regions.
 4. The method of claim 1, wherein the secondprocessing of the preliminary layer includes oxidizing a portion of thetrap regions and oxidizing partial regions of the preliminary layer,adjacent to the trap regions.
 5. The method of claim 1, before thedefining of the blocking regions, further comprising etching theinterlayer insulating layers and increasing widths of the recess regionsso that regions of the preliminary layer adjacent to the trap regionsare exposed.
 6. The method of claim 1, wherein, during the alternatelystacking of the interlayer insulating layers and the sacrificial layers,each of the interlayer insulating layers is formed to have a greaterthickness than that of each of the sacrificial layers.
 7. The method ofclaim 1, before the alternately stacking of the interlayer insulatinglayers and the sacrificial layers, further comprising: forming a pipegate in a semiconductor substrate; etching the pipe gate to form a pipetrench; and filling the pipe trench with a sacrificial layer.
 8. Themethod of claim 4, wherein during the oxidization process, the partialregions of the preliminary layer other than the trap regions areoxidized more rapidly than the trap regions of the preliminary layer. 9.The method of claim 4, wherein the oxidization process is controlled sothat portions of the trap regions and the entirety of the channel layerremain not oxidized.
 10. The method of claim 4, wherein the oxidizationprocess is controlled so that partial regions of the preliminary layer,between the trap regions, remain not oxidized.
 11. The method of claim7, before the forming of the preliminary layer, the tunnel insulatinglayer, and the channel layer, further comprising removing thesacrificial layer formed within the pipe trench, and during the formingof the preliminary layer, the tunnel insulating layer, and the channellayer the preliminary layer, the tunnel insulating layer, and thechannel layer are also formed within the pipe trench.
 12. The method ofclaim 11, wherein the firstly processing and secondly processing of thepreliminary layer is controlled so that partial regions of thepreliminary layer, formed within the pipe trench, remain not defined bythe trap regions or the blocking regions.